Preparation and physical characterization of amorphous silicon semiconductor films

Authors

  • Enver Fernández Chillcce Laboratorio de Óptica, Facultad de Ciencias, Universidad Nacional de Ingeniería. Lima, Perú.
  • Carmen Eyzaguirre Gorvenia Laboratorio de Óptica, Facultad de Ciencias, Universidad Nacional de Ingeniería. Lima, Perú.
  • Aníbal Valera Palacios Laboratorio de Óptica, Facultad de Ciencias, Universidad Nacional de Ingeniería. Lima, Perú.

DOI:

https://doi.org/10.21754/tecnia.v9i1.442

Abstract

In this work, we present our first results in the elaboration and characterization of thin film amorphous silicon (a-Si: H). The films were obtained by an original reactiv “DC glow discharge” process, which, compared to other results obtained with the same equipment, show now very Good optical quality. This goal allows us the measurement of the optical parameters (n, k) of our probes in a great spectral range. At this report, we show also some complementary results related to the semiconductor behaviour as the electrical conductivity and seebeck effect.

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References

[1] Heavens O.S. "Optical properties of Thin Solid Films" Butterworths Scientific Publ. London. 1955

[2] Valera A., Eyzaguirre C. "Óptica Física" Ed. Hozlo, 420 págs., Nov. 97, Lima

[3] Swanepoel R. "Determination of the Thinckness and optical constants of amorphous silicon" J.Phys. E: Sci. Instrum., Vol. 16, London 1983

[4] Valera A. y Col "Elaboración y propiedades de Películas Delgadas de Silicio amorfo por PAT" TECNIA, Vol. 6, N° 1, págs. 69 - 71, Lima 1996.

[5] Wright, D.A. "Semi-conductors" Science perpbacks & Methuen

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Published

1999-06-01

How to Cite

[1]
E. Fernández Chillcce, C. Eyzaguirre Gorvenia, and A. Valera Palacios, “Preparation and physical characterization of amorphous silicon semiconductor films”, TEC, vol. 9, no. 1, pp. 69–79, Jun. 1999.

Issue

Vol. 9 No. 1 (1999)

Section

Articles

License

Copyright (c) 1999 TECNIA

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